DS92LV18TVV National Semiconductor, DS92LV18TVV Datasheet - Page 2

• Manufacturer Part Number: DS92LV18TVV
• Description: Line Receiver IC
• Manufacturer: National Semiconductor

Specifications of DS92LV18TVV

• Driver Case Style: LQFP
• No. Of Pins: 80
• Peak Reflow Compatible (260 C): No
• Supply Voltage Max: 3.3V
• Leaded Process Compatible: No
• Package / Case: 80-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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LVCMOS/LVTTL DC Specifications
Bus LVDS DC specifications
Symbol
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
VTH
V
VTL
V
V
V
I
I
V
I
I
OS
OZ
IN
OH
IN
OL
CL
IH
IL
Supply Voltage (V
LVCMOS/LVTTL Input
Voltage
LVCMOS/LVTTL Output
Voltage
Bus LVDS Receiver Input
Voltage
Bus LVDS Driver Output
Voltage
Bus LVDS Output Short
Circuit
Junction Temperature
Storage Temperature
Lead Temperature
(Soldering, 4 seconds)
Output Short Circuit Current
TRI-STATE Output Current
Differential Threshold High
High Level Output Voltage
Low Level Output Voltage
Differential Threshold Low
Duration
High Level Input Voltage
Low Level Input Voltage
Input Clamp Voltage
Input Current
Input Current
Parameter
CC
Voltage
Voltage
)
−0.3V to (V
−0.3V to (V
−65˚C to +150˚C
−0.3V to +3.9V
−0.3V to +3.9V
−0.3V to +4V
V
CC
CC
0.8V, V
V
PWRDN or REN =
IN
V
IN
+150˚C
+260˚C
+0.3V)
+0.3V)
IN
VCM = +1.1V
(Note 1)
I
= 0V, V
I
CL
10ms
VOUT = 0V
Conditions
OH
I
= +2.4V, V
3.6V or 0V
OL
= 0V or 3.6V
= −18 mA
or 0V
= −9 mA
OUT
VCC
= 9 mA
CC
= 0V or
= 3.6V
CC
2
=
Recommended Operating
Conditions
Supply Voltage (V
Operating Free Air
Clock Rate
Supply Noise
R
SYNC, RCLK_R/F,
OUT
Temperature (T
REN, REFCLK,
TPWDN, DIN,
Maximum Package Power Dissipation Capacity
Package Derating:
80L PQFP
θ
θ
ESD Rating (HBM)
R
DEN, TCLK,
JA
JC
Pin/Freq.
, RCLK, LOCK
OUT
RPWDN
RI+, RI-
, RCLK
A
CC
)
)
GND
GND
−100
Min
−10
−15
−10
−10
−10
2.0
2.3
3.15
Min
−40
15
23.2 mW/˚C above
Nom
+25
3.3
±
0.33
Typ
-0.7
−48
3.0
±
±
±
0.4
2
5
5
11.1˚C/W
Max
3.45
+85
100
66
43˚C/W
>
+25˚C
2.0kV
+100
−1.5
Max
V
+10
V
−85
+10
+10
+10
0.8
0.5
CC
CC
Units
MHz
(p-p)
mV
˚C
V
Units
mA
mV
mV
µA
µA
µA
µA
V
V
V
V
V