DE275-501N16A IXYS RF, DE275-501N16A Datasheet - Page 2
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DE275-501N16A
Manufacturer Part Number
DE275-501N16A
Description
RF MOSFET, N CHANNEL, 500V, DE-275
Manufacturer
IXYS RF
Datasheet
1.DE275-501N16A.pdf
(4 pages)
Specifications of DE275-501N16A
Drain Source Voltage Vds
500V
Continuous Drain Current Id
16A
Power Dissipation Pd
590W
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
DE-275
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
R
C
C
C
C
T
T
T
T
Q
Q
Q
Source-Drain Diode
Symbol
I
I
V
T
Q
I
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
S
SM
RM
d(on)
on
d(off)
off
rr
SD
G
iss
oss
rss
stray
g(on)
gs
gd
RM
Test Conditions
V
f = 1 MHz
Back Metal to any Pin
V
I
R
V
I
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
I
V
D
D
F
F
4,850,072
5,049,961
5,640,045
GS
GS
GS
GS
R
G
= I
= I
= 0.5 I
= 0.5 I
= 100V
= 0.2 Ω (External)
= 0 V, V
= 15 V, V
= 10 V, V
= 0 V
S
S
, V
, -di/dt = 100A/µs,
GS
DM
D25
= 0 V,
DS
DS
DS
= 0.8 V
4,881,106
5,063,307
= 0.8 V
= 0.5 V
DSS(max)
DSS
DSS
,
4,891,686
5,187,117
JM
Characteristic Values
(
Characteristic Values
(
T
T
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
min.
min.
4,931,844
5,237,481
1800
typ.
typ.
150
200
0.3
0.6
40
21
50
20
30
3
2
4
5
4
5,017,508
5,486,715
max.
max.
1.5
98
6
nC
nC
nC
µC
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
A
A
V
A
RF Power MOSFET
DE275-501N16A