DE275-101N30A IXYS Corporation, DE275-101N30A Datasheet
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DE275-101N30A
Manufacturer Part Number
DE275-101N30A
Description
Preliminary Specifications Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, Co Usa 80526 970 493-1901 Fax 970 493-1903 Internet Www.dirnrg.com
Manufacturer
IXYS Corporation
Datasheet
1.DE275-101N30A.pdf
(1 pages)
PRELIMINARY SPECIFICATIONS
Directed Energy, Incorporated
2401 Research Blvd, Suite 108
Fort Collins, CO USA 80526
(970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
ELECTRICAL CHARACTERISTICS
V DSS
BV DSS
V GS(th)
V GS
I DC
I DP
g
R DS(on)
C iss
C oss
C rss
t d(on)
t (r)
t d(off)
t f
SOURCE-DRAIN DIODE CHARACTERISTICS
I SC
I SP
V SD
t rr
THERMAL CHARACTERISTICS
R JC
R JHS
R JHA
P D AMB
P D HS
T J & T sto
T L
1) DEI Test Fixture P/N 6040-0023.
(2) DEI Test Fixture P/N 6040-1023.
(3) DEI Test Fixture P/N 6040-2023.
(4) Pulse width and repetition rate limited by junction temperature.
fs
Drain-Source Voltage
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Voltage Continuous
Drain Current Continuous
Drain Current Pulsed
Forward Transconductance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Junction to Case
Junction to Heat Sink
Junction to Ambient
Power Dissipation Free Air Operation
Power Dissipation W (Heat Sink)
Operating and Storage Temperature
Max. Lead Temp. for Soldering
(8) T HS = 25 o C
(5) T c = 25 o C.
(6) See mounting instructions.
(7) T AMB = 25 o C.
MIN
MIN
MIN
100
-55
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2500
TYP
TYP
TYP
.390
500
100
600
270
.05
.45
4.5
20
28
3
5
5
8
8
-
-
-
-
-
-
-
-
-
-
MAX
MAX
MAX
+150
100
±20
240
240
300
2.5
30
30
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
UNITS
o C/W
o C/W
o C/W
o C
o C
pF
pF
pF
ns
ns
ns
ns
ns
W
W
V
V
A
A
S
A
A
V
v
v
V GS = 0, I DS = 250mA (1)
V DS = V GS , I D = 250mA (1)
(1) (5) (6)
(2) (4) (5) (6)
V GS = 50V, I DS = .5I DC (1) (5)
V GS = 15V, I DS = .5I DC (1) (5)
V DS = .8BV DS
f = 1.0MHz
(3)
V DS = .8BV DS
I DS = .5I DC
Z GD £ 1W
(2)
(1) (5)
(2) (4) (5)
I SD = .5I SC, V GS = 0 (1) (5)
I SD = .5I SC
(6)
(1) (6)
Free Air Operation (6)
Free Air Operation T J = 150 o C (6) (7)
T J = 150 o C (6) (8)
US Patents 4891686, 5640045
DE-275 101N30
Foreign Patents Pending
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
30A, 100V, 0.05
(04/1999)