DE275-101N30A IXYS Corporation, DE275-101N30A Datasheet

DE275-101N30A

Manufacturer Part Number

DE275-101N30A

Description

Preliminary Specifications Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, Co Usa 80526 970 493-1901 Fax 970 493-1903 Internet Www.dirnrg.com

Manufacturer

IXYS Corporation

Datasheet

1.DE275-101N30A.pdf (1 pages)

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PRELIMINARY SPECIFICATIONS

Directed Energy, Incorporated

2401 Research Blvd, Suite 108

Fort Collins, CO USA 80526

(970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com

ELECTRICAL CHARACTERISTICS

V DSS

BV DSS

V GS(th)

V GS

I DC

I DP

R DS(on)

C iss

C oss

C rss

t d(on)

t (r)

t d(off)

t f

SOURCE-DRAIN DIODE CHARACTERISTICS

I SC

I SP

V SD

t rr

THERMAL CHARACTERISTICS

R JC

R JHS

R JHA

P D AMB

P D HS

T J & T sto

T L

1) DEI Test Fixture P/N 6040-0023.

(2) DEI Test Fixture P/N 6040-1023.

(3) DEI Test Fixture P/N 6040-2023.

(4) Pulse width and repetition rate limited by junction temperature.

Drain-Source Voltage

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Source Voltage Continuous

Drain Current Continuous

Drain Current Pulsed

Forward Transconductance

Static Drain-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Junction to Case

Junction to Heat Sink

Junction to Ambient

Power Dissipation Free Air Operation

Power Dissipation W (Heat Sink)

Operating and Storage Temperature

Max. Lead Temp. for Soldering

(8) T HS = 25 o C

(5) T c = 25 o C.

(6) See mounting instructions.

(7) T AMB = 25 o C.

MIN

100

-55

2500

TYP

.390

500

100

600

270

.05

.45

4.5

MAX

+150

100

±20

240

300

2.5

UNITS

o C/W

o C

V GS = 0, I DS = 250mA (1)

V DS = V GS , I D = 250mA (1)

(1) (5) (6)

(2) (4) (5) (6)

V GS = 50V, I DS = .5I DC (1) (5)

V GS = 15V, I DS = .5I DC (1) (5)

V DS = .8BV DS

f = 1.0MHz

(3)

V DS = .8BV DS

I DS = .5I DC

Z GD £ 1W

(2)

(1) (5)

(2) (4) (5)

I SD = .5I SC, V GS = 0 (1) (5)

I SD = .5I SC

(6)

(1) (6)

Free Air Operation (6)

Free Air Operation T J = 150 o C (6) (7)

T J = 150 o C (6) (8)

US Patents 4891686, 5640045

DE-275 101N30

Foreign Patents Pending

TEST CONDITIONS

30A, 100V, 0.05

(04/1999)

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