DE275-501N16A IXYS RF, DE275-501N16A Datasheet - Page 4

• Manufacturer Part Number: DE275-501N16A
• Description: RF MOSFET, N CHANNEL, 500V, DE-275
• Manufacturer: IXYS RF

Specifications of DE275-501N16A

• Drain Source Voltage Vds: 500V
• Continuous Drain Current Id: 16A
• Power Dissipation Pd: 590W
• Operating Temperature Range: -55°C To +175°C
• Rf Transistor Case: DE-275
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
the device, Rds is the resistive leakage term. The output capacitance, C
capacitance, C
sponse necessary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .38 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .38
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
RSS
are modeled with reversed biased diodes. This provides a varactor type re-
20 GATE
Lg
Figure 1 DE-SERIES SPICE Model
5
Doff
Don
Roff
Ron
6
7
D1crs
D2crs
8
2
10 DRAIN
4
30 SOURCE
Ld
Rd
M3
Ls
G
, L
S
Dcos
and L
OSS
D
Rds
RF Power MOSFET
. Rd is the R
DE275-501N16A
, and reverse transfer
An
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Fort Collins, CO USA 80526
970-493-1901 Fax: [phone]
Email: [e-mail]
Web: http://www.directedenergy.com
Doc #9200-0222 Rev 3
© 2003 IXYS RF
DS(ON)
IXYS Company
of