2MBI400U4H-120-50 FUJI ELECTRIC, 2MBI400U4H-120-50 Datasheet - Page 10

• Manufacturer Part Number: 2MBI400U4H-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 400A, M234
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI400U4H-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 400A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 2.045kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
80
70
60
50
40
30
20
10
1000
1000
0
100
100
0.1
10
10
0.1
Vcc=600V, VGE=±15V, RG=1.5Ω, Tj=25
0
Vcc=600V, Ic=400A, VGE=±15V,
Vcc=600V, Ic=400A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Gate resistance : RG [ Ω ]
200
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
1.0
1.0
ton
400
10.0
10.0
toff
tr
Tj=25
600
Eon
Eoff
Err
ton
toff
tf
tr
tf
o
o
C
C
o
C
100.0
100.0
800
70
60
50
40
30
20
10
1000
10000
0
800
600
400
200
1000
+VGE=15V, -VGE <= 15V, RG >= 1.5Ω,
100
0
0
10
MS5F6038
0
Vcc=600V, VGE=±15V, RG=1.5Ω, Tj=125
0
100
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.5Ω
Reverse bias safe operating area (max.)
200
Collector-Emitter voltage : VCE [ V ]
400
200
Collector current : Ic [ A ]
Collector current : Ic [ A ]
300
400
800
400
500
1200
600
Eon(125
Tj <= 125
tr
600
Eoff(125
H04-004-03a
Eoff(25
Err(125
Eon(25
Err(25
10
ton
toff
tf
700
o
C
o
13
C)
o
o
C
o
C)
o
o
o
C)
C)
C)
C)
1600
800
800