2MBI450U4J-120-50 FUJI ELECTRIC, 2MBI450U4J-120-50 Datasheet - Page 11

• Manufacturer Part Number: 2MBI450U4J-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 450A, M250
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI450U4J-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 2.08kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000.0
1200
1000
100.0
1200
1000
800
600
400
200
10.0
800
600
400
200
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
Collector-Emitter voltage : VCE [ V ]
1
1
VGE=15V / chip
VGE=20V
10
Tj=25
2
2
Tj=25
o
C / chip
15V
o
C
3
3
20
Tj=125
12V
o
C
4
4
o
Cies
Coes
C
Cres
10V
8V
30
5
5
10
1200
1000
8
6
4
2
0
800
600
400
200
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
5
0
0
Collector current vs. Collector-Emitter voltage (typ.)
0
MS5F6858
500
Collector-Emitter voltage : VCE [ V ]
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=450A, Tj=25
1
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
1000
Tj=125
Tj=25
2
VGE=20V
15
o
o
C / chip
C / chip
1500
3
15V
VGE
VCE
20
o
2000
C
11
H04-004-03a
Ic=900A
Ic=450A
Ic=225A
4
15
10V
8V
12V
2500
25
5