2MBI450U4J-120-50 FUJI ELECTRIC, 2MBI450U4J-120-50 Datasheet - Page 7

• Manufacturer Part Number: 2MBI450U4J-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 450A, M250
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI450U4J-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 2.08kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

13. List of material (材料リスト)
14. RoHS Directive Compliance (RoHS 指令適用について)
本IGBTモジュールは富士電機デバイステクノロジーが発行しているRoHSに関する資料MS5F6209を適用する。
日本語版(MS5F6212)は参考資料とする。
Module. The Japanese Edition(MS5F6212) is made into a reference grade.
The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT
16
No.
10 Solder (Under chip)
11
12 Label
13 FWD chip
14 Ring
15 Thermistor
16 Terminal
17 Nut
14
1 Base Plate
2
3 Cover
4 Case
5 Isolation substrate
6 IGBT chip
7 Wiring
8 Silicone Gel
9 Adhesive
(Under Isolation substrate )
Spring terminal
Solder
Parts
7
5
Phosphor Bronze Ag plating
Material (main)
Silicone resin
Silicone resin
Sn/Ag base
Sn/Ag base
Al
Lead glass
PPS resin
PPS resin
Aluminum
2
Silicon
Silicon
Paper
O
Cu
Cu
Fe
Fe
13
3
+ Cu
(Total weight of soldering material(typ) : 12.0 g)
6
15
Ni plating
UL 94V-0
UL 94V-0
(Not drawn in above)
(Not drawn in above)
(Not drawn in above)
Trivalent Chromate treatment
Ni plating
Trivalent Chromate treatment
MS5F6858
Ref.
2
17
3
H04-004-03a
7
15
8
9
4
1