7MBR50SB-120-50 FUJI ELECTRIC, 7MBR50SB-120-50 Datasheet - Page 10

• Manufacturer Part Number: 7MBR50SB-120-50
• Description: PIM 7PK IGBT MOD +I/P BR 50A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR50SB-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 360W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Power Dissipation Pd: 360W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

cate-
gorie
Test
s
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
5 Solderability
6 Resistance to Soldering Heat
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 High temperature Reverse Bias
4 Intermitted Operating Life
(Pull test)
( for Collector-Emitter)
( for gate )
( for Cathode Anode)
(Power cycling)
( for IGBT )
Pressurized Vapor
Storage
Test items
Reliability Test Results
(Aug.-2001 edition)
Condition code B
Condition code B
Condition code A
Condition code A
Test Method 401
Test Method 402
Test Method 403
Test Method 404
Test Method 303
Test Method 302
Test Method 201
Test Method 202
Test Method 103
Test Method 103
Test Method 105
Test Method 307
Test Method 101
Test Method 101
Test Method 101
Test Method 106
EIAJ ED-4701
Test code C
Test code E
Reference
method Ⅰ
MethodⅠ
methodⅡ
norms
MS6M0872
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Number
sample
failure
of
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
H04-004-03a
10
16
a