7MBR50SB-120-50 FUJI ELECTRIC, 7MBR50SB-120-50 Datasheet - Page 10
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7MBR50SB-120-50
Manufacturer Part Number
7MBR50SB-120-50
Description
PIM 7PK IGBT MOD +I/P BR 50A 1200V NPT
Manufacturer
FUJI ELECTRIC
Datasheet
1.7MBR50SB-120-50.pdf
(16 pages)
Specifications of 7MBR50SB-120-50
Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
75A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Max
360W
Collector Emitter Voltage V(br)ceo
1.2kV
Power Dissipation Pd
360W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
cate-
gorie
Test
s
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
5 Solderability
6 Resistance to Soldering Heat
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 High temperature Reverse Bias
4 Intermitted Operating Life
(Pull test)
( for Collector-Emitter)
( for gate )
( for Cathode Anode)
(Power cycling)
( for IGBT )
Pressurized Vapor
Storage
Test items
Reliability Test Results
(Aug.-2001 edition)
Condition code B
Condition code B
Condition code A
Condition code A
Test Method 401
Test Method 402
Test Method 403
Test Method 404
Test Method 303
Test Method 302
Test Method 201
Test Method 202
Test Method 103
Test Method 103
Test Method 105
Test Method 307
Test Method 101
Test Method 101
Test Method 101
Test Method 106
EIAJ ED-4701
Test code C
Test code E
Reference
method Ⅰ
MethodⅠ
methodⅡ
norms
MS6M0872
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Number
sample
failure
of
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
H04-004-03a
10
16
a