7MBR50SB-120-50 FUJI ELECTRIC, 7MBR50SB-120-50 Datasheet - Page 14

• Manufacturer Part Number: 7MBR50SB-120-50
• Description: PIM 7PK IGBT MOD +I/P BR 50A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR50SB-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 360W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Power Dissipation Pd: 360W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
5
1
1
VGE=0V, f= 1MHz, Tj= 25℃
10
Tj= 25℃
VGE=15V (typ.)
2
2
[ Brake ]
15
[ Brake ]
[ Brake ]
VGE= 20V
20
Tj= 25℃
(typ.)
3
3
15V
25
12V
Tj= 125℃
4
4
30
Cies
Coes
Cres
10V
8V
35
5
5
1000
800
600
400
200
60
50
40
30
20
10
10
0
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage
0
5
0
Collector current vs. Collector-Emitter voltage
Collector - Emitter voltage : VCE [ V ]
MS6M0872
Gate - Emitter voltage : VGE [ V ]
50
1
10
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25℃
Gate charge : Qg [ nC ]
Tj= 125℃
Tj= 25℃
100
2
[ Brake ]
[ Brake ]
[ Brake ]
15
150
(typ.)
(typ.)
3
VGE= 20V
20
Ic= 50A
Ic= 25A
Ic= 12.5A
200
4
15V
H04-004-03a
14
10V
12V
16
8V
250
25
5
25
20
15
10
5
0
a