7MBR75U4B-120-50 FUJI ELECTRIC, 7MBR75U4B-120-50 Datasheet - Page 10

• Manufacturer Part Number: 7MBR75U4B-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 75A, M712
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR75U4B-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 275W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10.0
120
100
120
100
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
1.0
0.1
80
60
40
20
80
60
40
20
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
0
0
0
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
VGE=20V 15V
10
VGE=15V / chip
Tj= 25°C / chip
2
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
Tj=25°C
3
3
20
Tj=125°C
12V
Cies
Cres
Coes
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
Collector current vs. Collector-Emitter voltage (typ.)
10
120
100
8
6
4
2
0
80
60
40
20
0
5
0
0
MS6M0855
Vcc=600V， Ic=75A，Tj= 25°C
Dynamic Gate charge (typ.)
50
Gate-Emitter voltage : VGE [V]
1
10
Collector-Emitter voltage : VCE [V]
Tj= 125°C / chip
Tj=25°C / chip
Gate charge : Qg [nC]
100
[ Inverter ]
VGE=20V 15V
[ Inverter ]
2
[ Inverter ]
150
15
3
200
VGE
VCE
20
250
4
Ic=100A
Ic=50A
Ic= 25A
H04-004-03a
10
12V
10V
8V
15
300
25
5