7MBR75U4B-120-50 FUJI ELECTRIC, 7MBR75U4B-120-50 Datasheet - Page 13

• Manufacturer Part Number: 7MBR75U4B-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 75A, M712
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR75U4B-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 275W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10.0
60
50
40
30
20
10
60
50
40
30
20
10
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
1.0
0.1
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
0
1
Collector-Emitter voltage : VCE [V]
1
Collector-Emitter voltage : VCE [V]
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
Tj=25°C
10
VGE=15V / chip
Tj= 25°C / chip
2
2
[ Brake ]
[ Brake ]
[ Brake ]
12V
3
3
Tj=125°C
20
Coes
Cies
Cres
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
10
60
50
40
30
20
10
0
8
6
4
2
0
0
5
0
0
MS6M0855
Vcc=600V， Ic=35A，Tj= 25°C
Dynamic Gate charge (typ.)
25
Collector-Emitter voltage : VCE [V]
1
Gate-Emitter voltage : VGE [V]
10
Tj= 125°C / chip
Tj=25°C / chip
Gate charge : Qg [nC]
50
VGE=20V
[ Brake ]
2
[ Brake ]
[ Brake ]
15
VGE
75
VCE
15V
3
100
20
4
H04-004-03a
Ic=50A
Ic=25A
Ic=12.5A
125
13
12V
10V
8V
15
150
25
5