SI5513DC-T1-E3 Vishay, SI5513DC-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI5513DC-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, 1206
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5513DC-T1-E3

• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.1 A @ N Channel or 2.1 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5513DC-T1-E3TR

Si5513DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
1
- 50
0.0
0.0
V
I
D
- 25
Source-Drain Diode Forward Voltage
DS
0.2
= 2.1 A
0.5
= 10 V
V
SD
0
0.4
Q
- Source-to-Drain Voltage (V)
g
Threshold Voltage
T
1.0
- Total Gate Charge (nC)
J
T
25
- Temperature (°C)
Gate Charge
J
= 150 °C
0.6
1.5
50
I
D
0.8
= 250 µA
75
2.0
1.0
T
100
J
= 25 °C
2.5
1.2
125
150
3.0
1.4
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
- 50
0
10
0
-4
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
V
I
- 25
D
10
GS
= 2.1 A
-3
= 4.5 V
1
T
0
V
J
10
GS
- Junction Temperature (°C)
Single Pulse Power
-2
- Gate-to-Source Voltage (V)
25
2
10
-1
Time (s)
S10-0547-Rev. G, 08-Mar-10
50
Document Number: 71186
I
D
= 2.1 A
1
3
75
100
10
4
125
100
150
600
5