SI5513DC-T1 Vishay Semiconductors, SI5513DC-T1 Datasheet

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SI5513DC-T1

Manufacturer Part Number
SI5513DC-T1
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Notes
a.
b.
c.
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
i
N Channel
N-Channel
P Channel
P-Channel
J
Ordering Information: Si5513DC-T1
ti
t A bi
D
1
1206-8 ChipFETr
D
Parameter
V
1
Bottom View
DS
J
J
D
a
a
−20
20
20
S
= 150_C)
= 150_C)
t
20
2
a
a
1
(V)
D
G
Parameter
2
1
Complementary 20-V (D-S) MOSFET
S
Si5513DC-T1—E3 (Lead (Pb)-Free)
2
a
a
1
0.155 @ V
0.260 @ V
G
0.075 @ V
0.134 @ V
2
r
a
DS(on)
b, c
T
T
T
T
A
A
A
A
GS
GS
GS
GS
= 25_C
= 85_C
= 25_C
= 85_C
(W)
= −4.5 V
= −2.5 V
= 4.5 V
= 2.5 V
Marking Code
A
EB XX
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Steady State
Steady State
T
t v 5 sec
Part # Code
J
V
V
I
P
P
, T
DM
I
I
I
GS
DS
D
D
S
D
D
I
stg
D
−2.9
−2.2
Lot Traceability
and Date Code
4.2
3.1
(A)
5 secs
4.2
3.0
1.8
2.1
1.1
Symbol
Q
N-Channel
R
R
R
g
thJA
thJF
(Typ)
4
4
3
3
20
10
Steady State
3.1
2.2
0.9
1.1
0.6
G
1
Typical
N-Channel MOSFET
−55 to 150
50
90
30
"12
260
D
S
5 secs
1
1
−2.9
−2.1
−1.8
2.1
1.1
Maximum
P-Channel
Vishay Siliconix
G
110
60
40
−20
−10
2
Steady State
P-Channel MOSFET
Si5513DC
−2.1
−1.5
−0.9
1.1
0.6
S
D
www.vishay.com
2
2
Unit
_C/W
C/W
Unit
_C
_C
W
W
V
V
A
A
1

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SI5513DC-T1 Summary of contents

Page 1

... Bottom View Ordering Information: Si5513DC-T1 Si5513DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si5513DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current a a Drain-Source On-State Resistance ...

Page 3

... − Total Gate Charge (nC) g Document Number: 71186 S-42138—Rev. F, 15-Nov-04 2 1.5 V 2.0 2 Si5513DC Vishay Siliconix N−CHANNEL Transfer Characteristics −55_C C 25_C 0.0 0.5 1.0 1.5 2.0 2.5 V − Gate-to-Source Voltage (V) GS Capacitance 600 500 C ...

Page 4

... Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...

Page 5

... I − Drain Current (A) D Document Number: 71186 S-42138—Rev. F, 15-Nov-04 − Square Wave Pulse Duration (sec 1.5 V 2.0 2 Si5513DC Vishay Siliconix N−CHANNEL −1 1 P−CHANNEL Transfer Characteristics −55_C C 8 25_C 0.0 0.5 1.0 1.5 2.0 2.5 V − Gate-to-Source Voltage (V) ...

Page 6

... Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 2 0.0 0.5 1.0 1.5 Q − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − ...

Page 7

... S-42138—Rev. F, 15-Nov-04 −2 − Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si5513DC Vishay Siliconix P−CHANNEL Notes Duty Cycle ...

Page 8

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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