SI5513DC-T1-E3 Vishay, SI5513DC-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI5513DC-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, 1206
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5513DC-T1-E3

• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.1 A @ N Channel or 2.1 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5513DC-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71186.
Document Number: 71186
S10-0547-Rev. G, 08-Mar-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
A
t
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
thJA
100
Si5513DC
t
t
1
2
(t)
= 90 °C/W
www.vishay.com
600
10
7