2N7002K-T1-E3 Vishay, 2N7002K-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N7002K-T1-E3
• Description: N-CH ENHANCEMENT MOSFET W/ ESD PROTECT
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of 2N7002K-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rohs Compliant: YES
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 200mW
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002K-T1-E3TR

2N7002K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
1000
0.1
- 0.2
- 0.4
- 0.6
- 0.8
100
2
1
0.4
0.2
0.0
10
10
1
0.0
- 50
Threshold Voltage Variance Over Temperature
-4
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
V
Source-Drain Diode Forward Voltage
- 25
GS
T
J
= 0 V
0.3
= 125 °C
Single Pulse
V
SD
T
0
J
- Source-to-Drain Voltage (V)
10
- Junction Temperature (°C)
-3
2 5
0.6
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
T
= 250 µA
T
J
0.9
J
= - 55 °C
7 5
= 25 °C
10
-2
100
1.2
125
Square Wave Pulse Duration (s)
1.5
150
10
-1
2.5
1.5
0.5
3
2
1
0
5
4
3
2
1
0
0.01
1
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-Source Voltage
I
D
0.1
2
= 200 mA
V
GS
- Gate-to-Source Voltage (V)
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
1
- T
Time (s)
A
t
I
1
D
= P
T
= 500 mA
A
t
2
DM
= 25 °C
S09-0857-Rev. E, 18-May-09
6
Z
10
thJA
Document Number: 71333
th JA
100
t
t
1
2
(t)
= 350 °C/W
8
100
600
600
10