2SK1317-E Renesas Electronics America, 2SK1317-E Datasheet - Page 2

• Manufacturer Part Number: 2SK1317-E
• Description: N CHANNEL MOSFET, 1.5KV, 2.5A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of 2SK1317-E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 12ohm
• Rds(on) Test Voltage Vgs: 15V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2SK1317
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
Rev.2.00 Sep 07, 2005 page 2 of 6
2. Value at T
3. Pulse test
Item
10 s, duty cycle
Item
C
= 25
°
C
1%
Symbol
V
V
R
Coss
(BR)DSS
Crss
Ciss
t
t
I
I
V
GS(off)
|y
DS(on)
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
1500
0.45
Min
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Symbol
I
D(pulse)
Pch
V
V
Tstg
Tch
I
GSS
I
DSS
DR
D
*2
*1
1750
0.75
Typ
990
125
110
0.9
—
60
17
70
60
—
—
—
9
Max
500
4.0
—
12
—
—
—
—
—
—
—
—
—
—
1
–55 to +150
Ratings
1500
100
150
2.5
2.5
20
7
Unit
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
A
I
V
V
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
D
D
D
D
F
F
GS
DS
DS
L
F
= 2 A, V
= 2 A, V
= 10 mA, V
= 1 mA, V
= 2 A, V
= 1 A, V
= 2 A, V
/dt = 100 A/ s
= 15
= 1200 V, V
= 10 V, V
= 20 V, V
Test conditions
GS
GS
GS
DS
GS
DS
= 0,
= 20 V *
= 0
= 15 V *
= 10 V,
GS
GS
Unit
DS
= 10 V
°
°
W
V
V
A
A
A
GS
C
C
= 0
= 0,
(Ta = 25°C)
(Ta = 25°C)
= 0
= 0
3
3