2SK1317-E Renesas Electronics America, 2SK1317-E Datasheet - Page 3

• Manufacturer Part Number: 2SK1317-E
• Description: N CHANNEL MOSFET, 1.5KV, 2.5A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of 2SK1317-E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 12ohm
• Rds(on) Test Voltage Vgs: 15V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2SK1317
Main Characteristics
Rev.2.00 Sep 07, 2005 page 3 of 6
120
80
40
50
40
30
20
10
5
4
3
2
1
0
0
0
Drain to Source Saturation Voltage
Power vs. Temperature Derating
Drain to Source Voltage V
Gate to Source Voltage V
Pulse Test
Typical Output Characteristics
Case Temperature T
vs. Gate to Source Voltage
20
4
50
40
8
15 V
12
60
100
Pulse Test
V
I
D
GS
C
= 3 A
0.5 A
= 4 V
2 A
1 A
( C)
10 V
16
GS
80
DS
8 V
7 V
6 V
5 V
(V)
(V)
150
100
20
0.03
0.01
1.0
0.5
1.0
0.3
0.1
2.0
1.6
1.2
0.8
0.4
50
20
10
10
5
2
3
0
0.1
10
Gate to Source Voltage V
Drain to Source Voltage V
Typical Transfer Characteristics
T
Static Drain to Source on State
Maximum Safe Operation Area
V
Pulse Test
Ta = 25 C
Resistance vs. Drain Current
Pulse Test
C
DS
0.2
30
= 25 C
–25 C
= 20 V
2
75 C
Drain Current I
100
0.5
4
300
1.0
V
GS
6
1,000
2
D
= 10 V
(A)
GS
8
3,000
DS
5
15 V
(V)
(V)
10,000
10
10