2SK1317-E Renesas Electronics America, 2SK1317-E Datasheet - Page 4

• Manufacturer Part Number: 2SK1317-E
• Description: N CHANNEL MOSFET, 1.5KV, 2.5A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of 2SK1317-E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 12ohm
• Rds(on) Test Voltage Vgs: 15V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2SK1317
Rev.2.00 Sep 07, 2005 page 4 of 6
5,000
2,000
1,000
1,000
500
200
100
800
600
400
200
20
16
12
50
0
8
4
0
0.05
–40
Reverse Drain Current I
di/dt = 100 A/ s, Ta = 25 C
V
Pulse Test
V
Pulse Test
Static Drain to Source on State
Dynamic Input Characteristics
Body to Drain Diode Reverse
V
GS
GS
Resistance vs. Temperature
Case Temperature T
0.1
DS
20
= 0
= 15 V
Gate Charge Qg (nc)
0
V
400 V
250 V
0.2
DD
Recovery Time
= 600 V
V
40
400 V
600 V
40
DD
0.5
I
= 250 V
D
= 2 A
60
80
1.0
I
V
D
GS
C
0.5 A, 1 A
= 2.5 A
DR
120
80
2
( C)
(A)
100
160
5
20
16
12
8
4
0
10,000
1,000
1,000
500
200
100
100
1.0
0.5
0.2
0.1
10
50
20
10
10
5
2
0.05
0.05
0
Drain to Source Voltage V
V
Pulse Test
V
PW = 2 s, duty < 1%
Forward Transfer Admittance
DS
0.1
GS
0.1
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
= 20 V
10
= 10 V V
Drain Current I
Drain Current I
Ta = 25 C
vs. Drain Current
0.2
0.2
–25 C
t
t
d (off)
t
d (on)
t
75 C
f
r
20
DD
0.5
0.5
= 30 V
•
•
30
Ciss
Coss
Crss
1.0
1.0
D
D
(A)
(A)
V
f = 1 MHz
GS
40
2
DS
2
= 0
(V)
50
5
5