PSMN035-100LS NXP Semiconductors, PSMN035-100LS Datasheet - Page 6

• Manufacturer Part Number: PSMN035-100LS
• Description: MOSFET,N CH,100V,27A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-100LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 29mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN035-100LS
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(S)
g
fs
40
30
20
10
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
10
…continued
20
30
Conditions
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
003a a e 357
DS
DS
G(ext)
I
= 15 A; V
= 15 A; dI
D
(A)
Figure 17
= 50 V; R
= 50 V
= 4.7 Ω; T
40
Rev. 2 — 18 August 2010
GS
S
/dt = 100 A/µs; V
L
= 0 V; T
N-channel QFN3333 100 V 32mΩ standard level MOSFET
= 3 Ω; V
j
= 25 °C
Fig 6.
j
= 25 °C;
GS
(A)
I
= 10 V;
D
30
20
10
0
GS
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
= 0 V;
PSMN035-100LS
2
T
j
= 150 °C
Min
-
-
-
-
-
-
-
4
Typ
11
6
22
7
0.85
52
102
T
j
© NXP B.V. 2010. All rights reserved.
V
= 25 °C
GS
003a a e 356
(V)
Max
-
-
-
-
1.2
-
-
6
Unit
ns
ns
ns
ns
V
ns
nC
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