PSMN9R5-100PS NXP Semiconductors, PSMN9R5-100PS Datasheet - Page 8

• Manufacturer Part Number: PSMN9R5-100PS
• Description: MOSFET,N CH,100V,89A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 8.16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN9R5-100PS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
80
60
40
20
5
4
3
2
1
0
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 175 °C
60
max
min
typ
4
120
T
j
V
All information provided in this document is subject to legal disclaimers.
= 25 °C
GS
003aad280
T
003aae020
j
(°C)
(V)
Rev. 03 — 28 October 2010
180
6
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
a
I
10
10
10
10
10
10
D
3.2
2.4
1.6
0.8
−1
−2
−3
−4
−5
−6
0
-60
gate-source voltage
factor as a function of junction temperature
0
0
PSMN9R5-100PS
2
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad774
T
j
(V)
(°C)
03aa35
180
6
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