PSMN9R5-100PS NXP Semiconductors, PSMN9R5-100PS Datasheet - Page 9

• Manufacturer Part Number: PSMN9R5-100PS
• Description: MOSFET,N CH,100V,89A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 8.16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN9R5-100PS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
V
R
(mΩ)
(V)
GS
DSon
40
30
20
10
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 4.5
V
25
25
DS
= 20 V
4.7
50
50
4.8
50 V
75
75
All information provided in this document is subject to legal disclaimers.
Q
I
003aae024
003aae026
G
D
(A)
(nC)
5.5
10
5
Rev. 03 — 28 October 2010
100
100
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
−2
V
V
V
GS(pl)
DS
GS(th)
GS
C
C
10
C
Q
iss
oss
rss
−1
GS1
PSMN9R5-100PS
I
Q
D
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
003aae023
003aaa508
DS
(V)
10
2
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