SUD45P03-15-E3 Vishay, SUD45P03-15-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD45P03-15-E3
• Description: P CHANNEL MOSFET, -30V, 13A, TO-252
• Manufacturer: Vishay

Specifications of SUD45P03-15-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 13A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 13 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD45P03-15
Siliconix
Typical Characteristics (25 C Unless Otherwise Noted)
Thermal Ratings
1-54
0.01
0.1
2
1
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
10
On-Resistance vs. Junction Temperature
–4
Duty Cycle = 0.5
V
I
0.02
0.05
D
GS
0.2
0.1
= 45 A
= 10 V
Maximum Drain Current vs.
T
T
J
A
Ambiemt Temperature
– Junction Temperature ( C)
– Ambient Temperature ( C)
S-57253—Rev. F, 24-Feb-98
10
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
10
–2
Square Wave Pulse Duration (sec)
Siliconix was formerly a division of TEMIC Semiconductors
Phone [phone]
500
100
100
0.1
10
10
10
1
1
–1
0.1
by r
Limited
0
DS(on)
Source-Drain Diode Forward Voltage
FaxBack [phone]
V
V
0.3
SD
DS
T
Single Pulse
– Source-to-Drain Voltage (V)
– Drain-to-Source Voltage (V)
J
Safe Operating Area
T
= 150 C
A
1
= 25 C
0.6
1
0.9
www.siliconix.com
T
10
J
= 25 C
1.2
10, 100 s
1 ms
10 ms
100 ms
1 s
dc
10
100
1.5
30