IRF634STRRPBF Vishay, IRF634STRRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF634STRRPBF
• Description: N CH MOSFET, 250V, 8.1A, SMD-220
• Manufacturer: Vishay

Specifications of IRF634STRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF634S, SiHF634S
Vishay Siliconix
www.vishay.com
4
91035_03
91035_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
150
GS
= 5.6 A
= 10 V
°
V
C
5
GS ,
T
25
J ,
Junction Temperature (°C)
°
Gate-to-Source Voltage (V)
C
6
20 40 60 80 100 120 140 160
7
20 µs Pulse Width
V
8
DS
=
50 V
9
10
91035_05
91035_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1750
1400
1050
700
350
20
16
12
8
4
0
0
10
0
I
0
D
= 5.6 A
V
V
DS ,
10
DS
Q
G
Drain-to-Source Voltage (V)
= 50 V
V
, Total Gate Charge (nC)
DS
= 125 V
20
V
V
C
C
C
DS
GS
iss
rss
oss
C
C
C
= C
= 200 V
= 0 V, f = 1 MHz
= C
= C
iss
oss
rss
S10-2695-Rev. B, 29-Nov-10
10
gs
gd
30
ds
1
Document Number: 91035
+ C
+ C
gd
gd
For test circuit
see figure 13
, C
40
ds
Shorted
50