IRF634STRRPBF Vishay, IRF634STRRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF634STRRPBF
• Description: N CH MOSFET, 250V, 8.1A, SMD-220
• Manufacturer: Vishay

Specifications of IRF634STRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.1A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF634S, SiHF634S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
91035_11
AS
R
10
10 V
0.1
G
10
-2
1
10
V
-5
0.05
0.02
0.01
DS
0 − 0.5
0.2
0.1
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
10
0.01 Ω
L
-4
91035_12c
Fig. 13 - Maximum Avalanche Energy vs. Drain Current
Single Pulse
(Thermal Response)
600
500
400
300
200
100
700
0
25
V
DD
10
Starting T
= 50 V
t
-3
+
-
1
, Rectangular Pulse Duration (s)
V
50
DD
J
, Junction Temperature (°C)
75
10
-2
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
0.1
DS
3.6 A
5.1 A
8.1 A
I
D
150
Notes:
1. Duty Factor, D = t
2. Peak T
t
1
j
p
= P
P
DM
DM
S10-2695-Rev. B, 29-Nov-10
x Z
Document Number: 91035
t
1
1
thJC
/t
V
2
t
DS
+ T
2
C
10
V
DD