BCM856BS NXP Semiconductors, BCM856BS Datasheet - Page 6

• Manufacturer Part Number: BCM856BS
• Description: TRANSISTOR,PNP/PNP MATCHED,SOT363
• Manufacturer: NXP Semiconductors

Specifications of BCM856BS

• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -65V
• Gain Bandwidth Ft Typ: 175MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 290
• Rohs Compliant: Yes

NXP Semiconductors
BCM856BS_BCM856DS_1
Product data sheet
Fig 1.
Fig 3.
V
BEsat
(V)
(A)
I
(1) T
(2) T
(3) T
0.20
0.16
0.12
0.08
0.04
C
1.3
1.1
0.9
0.7
0.5
0.3
0.1
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
amb
amb
amb
amb
/I
1
B
= 20
= 25 C
= 55 C
= 25 C
= 100 C
2
1
(1)
(2)
(3)
4
I
B
10
(mA) = 2.5
6
2.25
2.0
1.75
1.5
1.25
1.0
0.75
0.5
0.25
10
2
8
I
006aaa542
006aaa540
C
V
(mA)
CE
(V)
10
Rev. 01 — 7 August 2008
10
3
Fig 2.
Fig 4.
V
BCM856BS; BCM856DS
h
CEsat
(V)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
FE
600
400
200
10
0
1
1
2
10
10
V
DC current gain as a function of collector
current; typical values
I
Collector-emitter saturation voltage as a
function of collector current; typical values
C
amb
amb
amb
amb
amb
amb
CE
/I
2
1
B
= 5 V
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
PNP/PNP matched double transistors
10
(1)
(2)
(3)
1
1
(1)
(2)
(3)
1
10
10
10
© NXP B.V. 2008. All rights reserved.
10
2
I
006aaa541
006aaa543
C
2
I
C
(mA)
(mA)
10
10
3
3
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