BD250C MULTICOMP, BD250C Datasheet
BD250C
Specifications of BD250C
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BD250C Summary of contents
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... BD249C / BD250C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. V CEO(sus) • DC Current Gain h • Current Gain Bandwidth Product f Pin 1. Base 2. Collector 3. Emitter Maximum Ratings Characteristic Collector Emitter Voltage Collector Base Voltage ...
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... BD249C / BD250C Complementary Power Transistors Thermal Characteristics Characteristic Thermal Resistance Junction to Case Figure - 1 Power Derating T , Temperature (°C) C Electrical Characteristics (T Characteristic OFF Characteristics Collector-Emitter Breakdown Voltage ( 30mA Collector Cut off Current (V = 60V Collector Cut off Current (V = 100V Emitter Cut off Current (V = 5.0V, I ...
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... BD249C / BD250C Complementary Power Transistors DC Current Gain I , Collector Current (AMP) C Turn-On Time I , Collector Current (AMP) C Active-Region Safe Operating Area (SOA Collector Emitter Voltage (Volts) CE Turn-Off Time I , Collector Current (AMP) C Reverse Base Safe Operating Area V , Collector Emitter (Volts) CE There are two limitations on the power handling ability of a ...
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... BD249C / BD250C Complementary Power Transistors Specifications I V C(av) CEO maximum maximum (A) (V) 25 100 tot minimum at 25° 1.5A ( 125 Page 4 Package Type NPN TO-218 PNP Part Number BD249C BD250C 05/10/05 V1.1 ...
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... BD249C / BD250C Complementary Power Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No 9645 8888 Fax No 9644 7898 AUSTRIA – Farnell InOne Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell InOne Tel No 475 2810 Fax No 227 3648 BRAZIL – ...