BD250C MULTICOMP, BD250C Datasheet - Page 2

• Manufacturer Part Number: BD250C
• Description: BIPOLAR TRANSISTOR, PNP, -100V, TO-218
• Manufacturer: MULTICOMP

Specifications of BD250C

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 100V
• Transition Frequency Typ Ft: 3MHz
• Power Dissipation Pd: 125mW
• Dc Collector Current: 40A
• Dc Current Gain Hfe: 25
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Electrical Characteristics (T
(1) Pulse Test : Pulse Width = 300µs, Duty Cycle ≤2.0%
(2) f
Thermal Resistance Junction to Case
BD249C / BD250C
Complementary Power Transistors
OFF Characteristics
Collector-Emitter Breakdown Voltage (1)
(I
Collector Cut off Current
(V
Collector Cut off Current
(V
Emitter Cut off Current
ON Characteristics (1)
DC Current Gain
(V
(V
(V
Collector-Emitter Saturation Voltage
(I
(I
Base-Emitter On Voltage
(I
(I
Dynamic Characteristics
Current Gain Bandwidth Product (2)
(I
(V
T
C
C
C
C
C
C
CE
CE
CE
CE
CE
= h
EB
= 30mA, I
= 15A, I
= 25A, I
= 15A, V
= 25A, V
= 1.0A, V
= 60V, I
= 100V, V
= 4.0V, I
= 4.0V, I
= 4.0V, I
= 5.0V, I
fe
 • f
Characteristic
B
B
CE
CE
CE
B
B
= 1.5A)
= 5.0A)
test
C
C
C
C
= 0)
= 0)
EB
= 4.0V)
= 4.0V)
= 1.5A)
= 15A)
= 25A)
= 10V, f = 1MHz)
Figure - 1 Power Derating
= 0)
= 0)
T
C
Characteristic
, Temperature (°C)
C
= 25°C unless otherwise noted)
Symbol
Rθjc
Maximum
1.0
Page 2
V
Symbol
V
V
(BR)CEO
I
I
I
CE(sat)
BE(on)
h
CEO
EBO
CES
f
FE
°C/W
T
Unit
Minimum
100
5.0
3.0
25
10
-
-
-
-
-
Maximum
1.0
0.7
1.0
1.8
4.0
2.0
4.0
-
-
-
05/10/05 V1.1
MHz
Unit
mA
V
V
-