BD250C MULTICOMP, BD250C Datasheet - Page 2
BD250C
Manufacturer Part Number
BD250C
Description
BIPOLAR TRANSISTOR, PNP, -100V, TO-218
Manufacturer
MULTICOMP
Datasheet
1.BD250C.pdf
(5 pages)
Specifications of BD250C
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
125mW
Dc Collector Current
40A
Dc Current Gain Hfe
25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BD250C
Manufacturer:
POWER
Quantity:
5 000
Company:
Part Number:
BD250C
Manufacturer:
MCC
Quantity:
15 000
Thermal Characteristics
Electrical Characteristics (T
(1) Pulse Test : Pulse Width = 300µs, Duty Cycle ≤2.0%
(2) f
Thermal Resistance Junction to Case
BD249C / BD250C
Complementary Power Transistors
OFF Characteristics
Collector-Emitter Breakdown Voltage (1)
(I
Collector Cut off Current
(V
Collector Cut off Current
(V
Emitter Cut off Current
ON Characteristics (1)
DC Current Gain
(V
(V
(V
Collector-Emitter Saturation Voltage
(I
(I
Base-Emitter On Voltage
(I
(I
Dynamic Characteristics
Current Gain Bandwidth Product (2)
(I
(V
T
C
C
C
C
C
C
CE
CE
CE
CE
CE
= h
EB
= 30mA, I
= 15A, I
= 25A, I
= 15A, V
= 25A, V
= 1.0A, V
= 60V, I
= 100V, V
= 4.0V, I
= 4.0V, I
= 4.0V, I
= 5.0V, I
fe
• f
Characteristic
B
B
CE
CE
CE
B
B
= 1.5A)
= 5.0A)
test
C
C
C
C
= 0)
= 0)
EB
= 4.0V)
= 4.0V)
= 1.5A)
= 15A)
= 25A)
= 10V, f = 1MHz)
Figure - 1 Power Derating
= 0)
= 0)
T
C
Characteristic
, Temperature (°C)
C
= 25°C unless otherwise noted)
Symbol
Rθjc
Maximum
1.0
Page 2
V
Symbol
V
V
(BR)CEO
I
I
I
CE(sat)
BE(on)
h
CEO
EBO
CES
f
FE
°C/W
T
Unit
Minimum
100
5.0
3.0
25
10
-
-
-
-
-
Maximum
1.0
0.7
1.0
1.8
4.0
2.0
4.0
-
-
-
05/10/05 V1.1
MHz
Unit
mA
V
V
-