BD250C MULTICOMP, BD250C Datasheet - Page 3

• Manufacturer Part Number: BD250C
• Description: BIPOLAR TRANSISTOR, PNP, -100V, TO-218
• Manufacturer: MULTICOMP

Specifications of BD250C

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 100V
• Transition Frequency Typ Ft: 3MHz
• Power Dissipation Pd: 125mW
• Dc Collector Current: 40A
• Dc Current Gain Hfe: 25
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BD249C / BD250C
Complementary Power Transistors
Active-Region Safe Operating Area (SOA)
V
CE
, Collector Emitter Voltage (Volts)
I
I
C
C
, Collector Current (AMP)
, Collector Current (AMP)
DC Current Gain
Turn-On Time
Page 3
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown safe operating area curves indicate I
the transistor that must be observed for reliable operation i.e.,
the transistor must not be subjected to greater dissipation than
the curves indicate.
The data of SOA curve is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
Reverse Base Safe Operating Area
I
V
C
CE
, Collector Current (AMP)
, Collector Emitter (Volts)
Turn-Off Time
J(PK)
= 150°C; T
C
J(PK)
-V
05/10/05 V1.1
CE
C
≤150°C.
limits of
is