2MBI150U4B-120-50 FUJI ELECTRIC, 2MBI150U4B-120-50 Datasheet - Page 11

• Manufacturer Part Number: 2MBI150U4B-120-50
• Description: DUAL IGBT MODULE 150A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI150U4B-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 780W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
40
30
20
10
1000
1000
0
100
100
10
10
1
Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=25
1
0
Vcc=600V, Ic=150A, VGE=±15V,
Vcc=600V, Ic=150A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
50
Gate resistance : RG [ Ω ]
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
10
100
10
ton
150
tr
Eon
Eoff
Err
ton
toff
tf
100
toff
100
200
Tj=25
tr
tf
250
o
o
C
C
o
C
1000
1000
300
25
20
15
10
400
300
200
100
10000
5
0
1000
+VGE=15V, -VGE <= 15V, RG >= 4.7Ω,
0
100
0
10
0
MS5F6568
Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=125
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
50
Vcc=600V, VGE=±15V, RG=4.7Ω
Reverse bias safe operating area (max.)
50
Collector-Emitter voltage : VCE [ V ]
400
Collector current : Ic [ A ]
100
Collector current : Ic [ A ]
100
150
800
150
200
200
Eon(25
1200
Tj <= 125
tr
11
H04-004-03a
Eoff(125
Eon(125
Err(125
Eoff(25
Err(25
250
ton
toff
tf
o
250
C)
o
14
C
o
o
C
C)
o
o
C)
o
C)
1600
o
C)
300
C)
300
a