2MBI150U4B-120-50 FUJI ELECTRIC, 2MBI150U4B-120-50 Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
2MBI150U4B-120-50
Manufacturer Part Number
2MBI150U4B-120-50
Description
DUAL IGBT MODULE 150A 1200V TRENCH
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI150U4B-120-50.pdf
(14 pages)
Specifications of 2MBI150U4B-120-50
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
780W
Collector Emitter Voltage V(br)ceo
1.2kV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI150U4B-120-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
5. Thermal resistance characteristics
Thermal resistance(1device)
Contact Thermal resistance
(1 device) (*4)
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Logo of production
7. Applicable category
8. Storage and transportation notes
9. Definitions of switching time
10. Packing and Labeling
6. Indication on module
This specification is applied to IGBT-Module named 2MBI150U4B-120-50.
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
•
•
•
•
•
•
The module should be stored at a standard temperature of 5 to 35
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
Lot.No.
Items
R
G
V
GE
Rth(j-c)
Rth(c-f)
Symbols
V
2MBI150U4B-120-50
CE
150A 1200V
Ic
L
IGBT
FWD
with Thermal Compound
Vcc
0V
Conditions
0V
0A
V
V
Ic
GE
CE
10%
Place of manufacturing (code)
90%
MS5F6568
t
o n
t
o
r
t
t
C and humidity of 45 to 75% .
r ( i )
r r
10%
min.
-
-
-
I
r r
Characteristics
V
Ic
CE
0.025
typ.
-
-
90%
t
o f f
max.
0.16
0.24
-
H04-004-03a
90%
t
f
5
10%
0V
14
Units
o
C/W
a