6MBI25S-120-50 FUJI ELECTRIC, 6MBI25S-120-50 Datasheet
6MBI25S-120-50
Specifications of 6MBI25S-120-50
Related parts for 6MBI25S-120-50
6MBI25S-120-50 Summary of contents
Page 1
... SPECIFICATION Device Name : Type Name : Spec. No. : Jul. 21 ‘05 K.Muramatsu Jul. 22 ‘05 T.Miyasaka T.Hosen Jul. 22 ‘05 K.Yamada IGBT Module (RoHS compliant product) 6MBI25S-120-50 MS5F 6171 MS5F 6171 1 14 H04- 004- 07b ...
Page 2
Classi- Date Ind. fication Enactment Jul.-21-’ Applied Content Drawn date Issued July-2005 date MS5F 6171 Checked Checked Approved T.Miyasaka K.Yamada T.Hosen 2 14 H04- 004- 06b ...
Page 3
... Outline Drawing ( Unit : Equivalent circuit 13(P) 1(Gu) 2(Eu) 3(Gx) 4(Ex) 17(N) (RoHS compliant product) 5(Gv) 9(Gw) 6(Ev) 10(Ew) 16(U) 15(V) 11(Gz) 7(Gy) 8(Ey) 12(Ez) MS5F 6171 14( H04- 004- 03a ...
Page 4
Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature (*1) Isolation voltage (*2) Mounting Screw Torque (*1) All terminals should be connected together ...
Page 5
... Indication on module (モジュール表示) Logo of production 6MBI25S-120-50 Lot.No. 7. Applicable category This specification is applied to IGBT Module named 6MBI25S-120-50. 8. Storage and transportation notes ・ The module should be stored at a standard temperature 35℃ and humidity 75 careful to solderability of the terminals if the module has passed over one year from manufacturing date, under the above storage condition. ・ ...
Page 6
... The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition(MS5F6212) is made into a reference grade. ...
Page 7
Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
Page 8
Test cate- Test items gories 1 High temperature Reverse Bias Test temp. (for Collector-Emitter) Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Intermitted ON time Operating Life ...
Page 9
Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 5 Solderability 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage ...
Page 10
Collector current vs. Collector- Emitter voltage Tj= 25℃ (typ.) 60 12V VGE= 20V 15V Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector- Emitter voltage VGE=15V ...
Page 11
Switching time vs. Collector current (typ.) Vcc=600V, VGE=± 15V, Rg=51Ω , Tj= 25℃ 1000 toff 500 ton tr 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=25A, ...
Page 12
Forward current vs. Forward on voltage (typ.) 60 Tj=25℃ Tj=125℃ Forward on voltage : Transient thermal resistance 5 1 0.1 0.01 0.001 0.01 0.1 Pulse width ...
Page 13
This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格(電圧,電流,温度等)の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and ...
Page 14
... The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本 ...