6MBI25S-120-50 FUJI ELECTRIC, 6MBI25S-120-50 Datasheet - Page 11
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6MBI25S-120-50
Manufacturer Part Number
6MBI25S-120-50
Description
6-PACK IGBT MODULE 25A 1200V NPT
Manufacturer
FUJI ELECTRIC
Datasheet
1.6MBI25S-120-50.pdf
(14 pages)
Specifications of 6MBI25S-120-50
Module Configuration
Six
Transistor Polarity
N Channel
Dc Collector Current
25A
Collector Emitter Voltage Vces
2.6V
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
No. Of
RoHS Compliant
Power Dissipation Pd
180W
Rohs Compliant
Yes
1000
5000
1000
500
100
500
100
50
50
20
15
10
5
0
10
10
0
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=± 15V, Tj= 125℃
Vcc=600V, VGE=± 15V, Rg=51Ω , Tj= 25℃
ton
Vcc=600V, Ic=25A, VGE=± 15V, Tj= 25℃
toff
tr
tf
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Gate resistance : Rg [ Ω ]
10
100
100
20
30
toff
ton
tr
Eoff
tf
Eon
Err
1000
1000
40
1000
500
100
50
60
50
40
30
20
10
7
6
5
4
3
2
1
0
0
0
0
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
+VGE=15V, - VGE≦ 15V, Rg≧ 51Ω , Tj≦ 125℃
Vcc=600V, VGE=± 15V, Rg= 51Ω , Tj= 125℃
toff
200
Collector - Emitter voltage : VCE [ V ]
MS5F 6171
ton
tr
tf
Reverse bias safe operating area
10
Vcc=600V, VGE=± 15V, Rg=51Ω
Collector current : Ic [ A ]
Collector current : Ic [ A ]
10
400
20
600
20
800
30
1000
30
Eoff( 125℃ )
Eon( 125℃ )
Eon( 25℃ )
Eoff( 25℃ )
Err( 125℃ )
Err( 25℃ )
40
H04- 004- 03a
11
1200
14
1400
40
50