SQD50P04-09L-GE3 Vishay, SQD50P04-09L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD50P04-09L-GE3
• Description: MOSFET,N CH,W DIODE,40V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50P04-09L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 0.0076ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes

TYPICAL CHARACTERISTICS (T
Document Number: 65018
S10-1996-Rev. B, 20-Sep-10
8000
7000
6000
5000
4000
3000
2000
1000
100
100
80
60
40
20
80
60
40
20
0
0
0
0
0
0
T
C
5
V
= - 55 °C
C
C
GS
rss
16
oss
3
V
V
= 10 V thru 5 V
DS
10
DS
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
Transconductance
T
I
iss
D
C
Capacitance
15
- Drain Current (A)
= 125 °C
32
6
V
V
T
20
GS
GS
C
= 25 °C
= 4 V
= 3 V
48
9
25
A
V
= 25 °C, unless otherwise noted)
30
GS
12
64
= 2 V, 1 V
35
15
80
40
0.05
0.04
0.03
0.02
0.01
100
80
60
40
20
10
8
6
4
2
0
0
0
0
0
0
I
D
= 50 A
20
On-Resistance vs. Drain Current
20
1
V
GS
Transfer Characteristics
Q
- Gate-to-Source Voltage (V)
V
g
40
GS
I
- Total Gate Charge (nC)
D
T
C
- Drain Current (A)
40
= 4.5 V
V
2
Gate Charge
= 125 °C
DS
T
SQD50P04-09L
C
= 20 V
60
= 25 °C
Vishay Siliconix
60
3
80
T
C
V
= - 55 °C
GS
www.vishay.com
80
4
100
= 10 V
100
120
5
3