VS-GT100LA120UX Vishay, VS-GT100LA120UX Datasheet - Page 4

• Manufacturer Part Number: VS-GT100LA120UX
• Description: TRANSISTOR,IGBT,1200V,100A,SOT227
• Manufacturer: Vishay

Specifications of VS-GT100LA120UX

• Transistor Type: IGBT
• Dc Collector Current: 134A
• Collector Emitter Voltage Vces: 2.36V
• Power Dissipation Max: 463W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GT100LA120UX
Vishay Semiconductors
www.vishay.com
4
160
140
120
100
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
80
60
40
20
0.0002
0
10
0
Fig. 7 - Maximum DC Forward Current vs.
Fig. 5 - Typical IGBT Threshold Voltage
I
F
30
Junction Temperature, V
- Continuous Forward Current (A)
20
0.0004
T
100 A
50
J
= 25 °C
Case Temperature
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70
40
I
T
C
0.0006
J
(mA)
(°C)
90
50 A
60
T
J
110
= 125 °C
"Low Side Chopper" IGBT SOT-227
27 A
GE
0.0008
= 15 V
130
80
150
(Trench IGBT), 100 A
0.001
100
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1000
300
250
200
150
100
100
25
20
15
10
50
10
5
0
0
10
Fig. 8 - Typical Diode Forward Characteristics
0
0
Fig. 10 - Typical IGBT Switching Time vs. I
Fig. 9 - Typical IGBT Energy Loss vs. I
T
T
20
J
J
= 125 °C, L = 500 μH, V
1
= 125 °C, L = 500 μH, V
20
t
f
30
t
d(on)
t
R
d(off)
R
2
t
r
g
40
g
40
= 5 , V
= 5 , V
T
J
3
V
50
I
I
= 25 °C
C
FM
C
60
(A)
(A)
GE
(V)
E
60
GE
Document Number: 93099
on
4
= 15 V
= 15 V
70
80
CC
CC
T
Revision: 22-Jul-10
5
J
= 600 V,
= 125 °C
80
= 600 V,
100
6
90
E
off
C
100
120
C
7