VS-GT100LA120UX Vishay, VS-GT100LA120UX Datasheet - Page 5

• Manufacturer Part Number: VS-GT100LA120UX
• Description: TRANSISTOR,IGBT,1200V,100A,SOT227
• Manufacturer: Vishay

Specifications of VS-GT100LA120UX

• Transistor Type: IGBT
• Dc Collector Current: 134A
• Collector Emitter Voltage Vces: 2.36V
• Power Dissipation Max: 463W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93099
Revision: 22-Jul-10
1000
100
40
35
30
25
20
15
10
0
0
0
Fig. 12 - Typical IGBT Switching Time vs. R
Fig. 11 - Typical IGBT Energy Loss vs. R
T
J
T
J
= 125 °C, L = 500 μH, V
= 125 °C, I
10
10
V
I
C
CC
[e-mail], [e-mail],
= 100 A, V
t
r
= 600 V, V
For technical questions within your region, please contact one of the following:
E
E
20
20
off
on
C
R
R
= 100 A, L = 500 μH,
g
g
(Ω)
(Ω)
GE
GE
30
30
t
2650
2400
2150
1900
1650
1400
1150
d(on)
= 15 V
"Low Side Chopper" IGBT SOT-227
900
650
400
= 15 V
CC
100
t
= 600 V,
d(off)
40
40
Fig. 15 - Typical Q
(Trench IGBT), 100 A
t
f
g
50
50
g
V
T
R
J
= 125 °C
= 200 V, I
dI
F
/dt (A/µs)
rr
F
Diode vs. dI
= 50 A
T
J
= 25 °C
F
[e-mail]
250
230
210
190
170
150
130
110
/dt
90
70
40
35
30
25
20
15
10
5
0
100
100
1000
Fig. 13 - Typical t
Fig. 14 - Typical I
Vishay Semiconductors
V
T
V
J
R
R
= 125 °C
= 200 V, I
= 200 V, I
T
dI
dI
J
GT100LA120UX
F
F
T
= 25 °C
/dt (A/µs)
/dt (A/µs)
J
= 125 °C
rr
rr
Diode vs. dI
Diode vs. dI
F
F
= 50 A
= 50 A
T
J
= 25 °C
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F
F
/dt
/dt
1000
1000
5