VS-GT100NA120UX Vishay, VS-GT100NA120UX Datasheet - Page 3

• Manufacturer Part Number: VS-GT100NA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GT100NA120UX

• Transistor Type: IGBT
• Dc Collector Current: 134A
• Collector Emitter Voltage Vces: 2.36V
• Power Dissipation Max: 463W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93100
Revision: 22-Jul-10
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature
range
Thermal resistance, junction to case
Thermal resistance, case to sink per module
Mounting torque, 6-32 or M3 screw
Weight
1000
0.01
100
160
140
120
100
0.1
10
80
60
40
20
1
0
Fig. 1 - Maximum DC IGBT Collector Current vs.
1
0
I
C
20
- Continuous Collector Current (A)
Fig. 2 - IGBT Reverse Bias SOA
10
40
T
J
= 150 °C, V
Case Temperature
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60
V
CE
100
80
(V)
GE
100
"High Side Chopper" IGBT SOT-227
= 15 V
Diode
IGBT
1000
120
140
(Trench IGBT), 100 A
10 000
SYMBOL
T
160
R
R
J
, T
thJC
thCS
Stg
MIN.
- 40
-
-
-
-
-
0.0001
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
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0.001
Fig. 3 - Typical IGBT Collector Current Characteristics
0.01
300
250
200
150
100
0.1
50
0
100
0
300
TYP.
0.05
1
T
30
Vishay Semiconductors
-
-
-
-
J
= 125 °C
T
2
500
J
= 25 °C
GT100NA120UX
V
V
CES
CE
3
T
700
(V)
J
(V)
= 25 °C
MAX.
0.27
0.37
150
1.3
-
-
4
900
T
J
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= 125 °C
5
1100
UNITS
°C/W
Nm
°C
g
6
3