VS-GT100NA120UX Vishay, VS-GT100NA120UX Datasheet - Page 6

• Manufacturer Part Number: VS-GT100NA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GT100NA120UX

• Transistor Type: IGBT
• Dc Collector Current: 134A
• Collector Emitter Voltage Vces: 2.36V
• Power Dissipation Max: 463W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GT100NA120UX
Vishay Semiconductors
www.vishay.com
6
0.001
0.001
0.01
0.01
0.1
0.1
0.00001
0.00001
1
1
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
0.0001
0.0001
DC
DC
Fig. 17 - Maximum Thermal Impedance Z
Fig. 16 - Maximum Thermal Impedance Z
"High Side Chopper" IGBT SOT-227
0.001
0.001
t
t
1
1
- Rectangular Pulse Duration (s)
- Rectangular Pulse Duration (s)
(Trench IGBT), 100 A
0.01
0.01
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
thJC
thJC
Characteristics (Diode)
Characteristics (IGBT)
[e-mail]
0.1
0.1
1
1
Document Number: 93100
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Revision: 22-Jul-10