VS-GT100NA120UX Vishay, VS-GT100NA120UX Datasheet - Page 8

• Manufacturer Part Number: VS-GT100NA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GT100NA120UX

• Transistor Type: IGBT
• Dc Collector Current: 134A
• Collector Emitter Voltage Vces: 2.36V
• Power Dissipation Max: 463W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GT100NA120UX
Vishay Semiconductors
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
www.vishay.com
8
Dimensions
Packaging information
Device code
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
1
2
3
4
5
6
7
8
G
1
-
-
-
-
-
-
-
-
"High Side Chopper" IGBT SOT-227
T
2
Insulated Gate Bipolar Transistor (IGBT)
T = Trench IGBT
Current rating (100 = 100 A)
Circuit configuration (N = High side chopper)
Package indicator (A = SOT-227)
Voltage rating (120 = 1200 V)
Speed/type (U = Ultrafast IGBT)
Diode (X = HEXFRED
LINKS TO RELATED DOCUMENTS
100
(Trench IGBT), 100 A
2
3
N
4
®
A
5
)
120
6
3
1
4
[e-mail]
U
7
www.vishay.com/doc?95036
www.vishay.com/doc?95037
X
8
Document Number: 93100
Revision: 22-Jul-10