111RKI80 Vishay, 111RKI80 Datasheet - Page 4

• Manufacturer Part Number: 111RKI80
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

110/111RKI Series
Vishay High Power Products
www.vishay.com
4
140
130
120
110
100
90
80
Fig. 1 - Current Ratings Characteristics
0
20
Average On-state Current (A)
160
140
120
100
220
200
180
160
140
120
100
30°
40
80
60
40
20
80
60
40
20
0
0
111RKI Series
R
0
0
thJC
RMS Limit
60°
60
20 40
RMS Limit
Average On-state Current (A)
(DC) = 0.27 K/W
Conduction Angle
20
Average On-state Current (A)
180°
120°
90°
DC
90°
60°
30°
180°
120°
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80
90°
60°
30°
120°
40
60 80 100 120 140 160 180
100
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
180°
60
Phase Control Thyristors
12
Conduction Period
(Stud Version), 110 A
Conduction Angle
111RKI Series
T = 140°C
J
111RKI Series
T = 140°C
80
J
100
120
0
0
Maximum Allowable Ambient Temperature (°C)
Maximum Allowable Ambient Temperature (°C)
20
20
40
40
60
60
140
130
120
110
100
90
80
70
80
80
Fig. 2 - Current Ratings Characteristics
0
100
100
20
Average On-state Current (A)
40 60
120
120
30°
60°
111RKI Series
R
140
140
thJC
80 100 120 140 160 180
90°
120°
(DC) = 0.27 K/W
Conduction Period
Document Number: 93692
180°
Revision: 06-Jun-08
DC