111RKI80 Vishay, 111RKI80 Datasheet - Page 5

• Manufacturer Part Number: 111RKI80
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93692
Revision: 06-Jun-08
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cycle Current Pulses (N)
2000
1800
1600
1400
1200
1000
800
1
At Any Rated Load Condition And With
111RKI Series
Rated V
RRM
0.001
0.01
0.1
0.0001
Applied Following Surge.
1
Steady State Value
R
(DC Operation)
10
thJC
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 140°C
= 0.27 K/W
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10000
Fig. 8 - Thermal Impedance Z
J
0.001
1000
Fig. 7 - On-State Voltage Drop Characteristics
100
10
1
0
Phase Control Thyristors
100
(Stud Version), 110 A
T = 25°C
J
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
1
0.01
2
111RKI Series
111RKI Series
T = 140°C
3
J
thJC
0.1
Characteristics
4
2500
2000
1500
1000
Fig. 6 - Maximum Non-Repetitive Surge Current
5
500
0.01
Vishay High Power Products
1
Maximum Non Repetitive Surge Current
111RKI Series
Of Conduction May Not Be Maintained.
Versus Pulse Train Duration. Control
Pulse Train Duration (s)
110/111RKI Series
0.1
10
Rated V
No Voltage Reapplied
Initial T = 140°C
RRM
1
Reapplied
J
www.vishay.com
10
5