111RKI80 Vishay, 111RKI80 Datasheet - Page 6

• Manufacturer Part Number: 111RKI80
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

110/111RKI Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
100
0.1
10
0.001
1
Device code
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
rated di/dt: 20V, 30ohms;
tr<=0.5 µs, tp=>6µs
<=30% rated di/dt: 15V, 40ohms
tr<=1 µs, tp=>6µs
VGD
For technical questions, contact: [e-mail]
IGD
0.01
LINKS TO RELATED DOCUMENTS
Phase Control Thyristors
1
2
3
4
Device: 111RKI Series
(Stud Version), 110 A
11
Fig. 9 - Gate Characteristics
1
0.1
Instantaneous Gate Current (A)
(b)
-
-
-
-
1
2
(a)
1 = Fast-on terminals (gate and auxiliary cathode leads)
I
0 = Eyelet terminals (gate and auxiliary cathode leads)
Thyristor
Voltage code x 10 = V
T(AV)
1
RKI
rated average output current (rounded/10)
3
Frequency Limited by PG(AV)
120
10
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
4
(1)
(2)
http://www.vishay.com/doc?95003
RRM
(3)
100
(see Voltage Ratings table)
(4)
1000
Document Number: 93692
Revision: 06-Jun-08