ATF-36163-TR1 Avago Technologies US Inc., ATF-36163-TR1 Datasheet - Page 2

• Manufacturer Part Number: ATF-36163-TR1
• Description: TRANSISTOR,HEMT,N-CHAN,3V V(BR)DSS,15mA I(DSS),SOT-363
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-36163-TR1

• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ATF-36163 Absolute Maximum Ratings
ATF-36163 Electrical Specifications
T
Note:
1. Measured in a test circuit tuned for a typical device.
ATF-36163 Typical Parameters
T
Note:
1. G
C
C
Symbol
Symbol
Symbol
= 25°C, Z
= 25°C, Z
BV
max
V
P
G
T
NF
I
p 10%
F
P
g
V
V
in max
T
V
V
G
dss
P
G
GDO
I
STG
m
GD
min
max
1dB
= MAG for K > 1 and G
DS
GS
CH
GS
D
T
a
O
O
Noise Figure
Gain at NF
Transconductance
Saturated Drain Current
Pinchoff Voltage
Gate Drain Breakdown Voltage
= 50 Ω, V
= 50 Ω, V
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Parameters and Test Conditions
Minimum Noise Figure (Γ
Associated Gain
Maximum Available Gain
Output Power at 1 dB Gain Compression
under the power matched condition
Gate to Source Voltage for I
ds
ds
Parameter
[1]
max
Parameters and Test Conditions
= 2 V, I
= 1.5 V, I
[1]
= MSG for K ≤ 1, which is shown on the S-parameters tables.
ds
ds
= 15 mA, (unless otherwise noted).
= 10 mA, (unless otherwise noted).
[1]
source
[1]
DS
Units
dBm
= 15 mA
mW
V
mA
= Γ
°C
°C
V
V
V
DS
opt
= 1.5 V, I
)
V
V
DS
DS
= 1.5 V, V
= 1.5 V, V
Maximum
Absolute
-65 to 150
DS
+10
-3.5
180
150
I
+3
f = 12.0 GHz
= 10% of I
-3
dss
f =12.0 GHz
I
G
GS
GS
= 30 µA
= 0 V
= 0 V
dss
V
f = 12 GHz
f = 12 GHz
f = 12 GHz
f = 12 GHz
Note:
1. Operation of this device above any one
f = 4 GHz
f = 4 GHz
f = 4 GHz
f = 4 GHz
DS
Thermal Resistance:
of these parameters may cause
permanent damage.
Units
= 2.0 V
mS
mA
dB
dB
V
V
2
θ
ch-c
Min.
-1.0
50
15
9
= 160° C/W
Units
dBm
dBm
dB
dB
dB
dB
dB
dB
V
Typ.
-0.35
1.2
10
60
25
Typ.
Max.
15.8
17.2
10.9
-0.2
1.4
-0.15
0.6
1.0
9.4
-3.5
5
5
40
[1]