BLF6G10LS-260PRN:1 NXP Semiconductors, BLF6G10LS-260PRN:1 Datasheet - Page 4

• Manufacturer Part Number: BLF6G10LS-260PRN:1
• Description: BLF6G10LS-260PRN/LDMOST/TUBE-B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-260PRN:1

• Transistor Type: LDMOS
• Frequency: 917.5MHz ~ 962.5MHz
• Gain: 22dB
• Voltage - Rated: 65V
• Current Rating: 64A
• Current - Test: 1.8A
• Voltage - Test: 28V
• Power - Output: 40W
• Package / Case: SOT539B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF6G10L-260PRN_LS-260PRN
Product data sheet
7.1 Ruggedness in class-AB operation
7.2 Impedance information
Table 7.
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1 to 64 DPCH; f
V
Table 8.
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3 GPP test model 1;
1 to 64 DPCH; f
otherwise specified.
The BLF6G10L-260PRN and BLF6G10L-260PRN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Table 9.
I
[1]
Symbol
RL
η
ACPR
Symbol Parameter
PAR
f
MHz
920
940
960
Dq
DS
Fig 1.
D
in
= 950 mA; main transistor V
= 28 V; I
Z
0
S
and Z
output peak-to-average
ratio
Definition of transistor impedance
Parameter
input return loss
drain efficiency
adjacent channel power ratio
2-carrier W-CDMA Application information
1 carrier W-CDMA Application information
Typical impedance per section
L
Dq
defined in
DS
1
= 1800 mA; T
1
= 917.5 MHz; f
= 960 MHz; RF performance at VDS = 28 V; I
All information provided in this document is subject to legal disclaimers.
= 28 V; I
Figure
Rev. 1 — 12 August 2010
Dq
case
1.
= 1800 mA; P
DS
2
= 25
= 922.5 MHz; f
Z
Ω
0.7 − j1.0
1.1 − j1.3
1.0 − j1.6
= 28 V
S
[1]
Conditions
PL(AV) = 125 W at 0.01 %
probability on CCDF
°
C; unless otherwise specified.
gate
Z
S
L
BLF6G10L(S)-260PRN
= 260 W (CW); f = 920 MHz to 960 MHz.
3
= 957.5 MHz; f
Conditions
P
P
P
001aaf059
L(AV)
L(AV)
L(AV)
Z
drain
L
= 40 W
= 40 W
= 40 W
…continued
dq
4
1800 mA; T
Min
3.8
= 962.5 MHz; RF performance at
Z
Ω
1.4 + j0.6
1.2 + j0.5
1.2 + j0.3
L
[1]
Power LDMOS transistor
Min
-
25.0
-
Typ
4.3
case
Typ
−10.0 −6.0
26.5
−39
© NXP B.V. 2010. All rights reserved.
= 25
Max
-
Max
-
−35
°
C; unless
Unit
dB
4 of 16
Unit
dB
%
dBc