GA75TS120UPBF Vishay, GA75TS120UPBF Datasheet

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GA75TS120UPBF

Manufacturer Part Number
GA75TS120UPBF
Description
TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,75A I(C)
Manufacturer
Vishay
Datasheet

Specifications of GA75TS120UPBF

Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
110 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
INT-A-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GA75TS120UPBF
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
GA75TS120UPBF
Quantity:
57
Document Number: 94427
Revision: 03-May-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
See fig. 17
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
Operating junction temperature range
Storage temperature range
V
CE(on)
at 75 A, 25 °C
I
V
C
CES
DC
INT-A-PAK
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
For technical questions, contact:
1200 V
110 A
2.5 V
SYMBOL
V
V
T
V
I
I
I
P
ISOL
CES
CM
FM
T
I
LM
Stg
GE
C
D
J
T
T
Repetitive rating; V
limited by maximum junction temperature
Any terminal to case, t = 1 minute
T
T
C
C
C
C
= 25 °C
= 76 °C
= 25 °C
= 85 °C
TEST CONDITIONS
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
indmodules@vishay.com
40 kHz in hard switching, > 200 kHz in resonant
mode
SMPS, welding
GE
= 20 V, pulse width
®
antiparallel diodes with ultrasoft recovery
Vishay High Power Products
GA75TS120UPbF
- 40 to + 150
- 40 to + 125
MAX.
2500
1200
± 20
110
150
150
150
390
200
75
www.vishay.com
UNITS
°C
W
A
V
V
1

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GA75TS120UPBF Summary of contents

Page 1

... Any terminal to case minute ISOL ° ° Stg For technical questions, contact: indmodules@vishay.com GA75TS120UPbF Vishay High Power Products ® antiparallel diodes with ultrasoft recovery MAX. 1200 110 pulse width GE 150 150 150 ± 20 2500 390 200 - 150 - 125 www.vishay.com UNITS ° ...

Page 2

... GA75TS120UPbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Forward transconductance Collector to emitter leaking current Diode forward voltage Gate to emitter leakage current SWITCHING CHARACTERISTICS (T PARAMETER Total gate charge (turn-on) ...

Page 3

... Current = I of Fundamental) RMS 160 140 120 100 3.0 3.5 3.0 2.5 2.0 1.5 7.0 7.5 8.0 For technical questions, contact: indmodules@vishay.com GA75TS120UPbF Vishay High Power Products For both: Duty cycle 125 ° °C sink Gate drive as specified Power dissipation = 100 100 Maximum DC Collector Current (A) Fig ...

Page 4

... GA75TS120UPbF Vishay High Power Products 1 0.1 Single pulse (thermal response) 0.01 0.0001 0.001 Fig Maximum Effective Transient Thermal Impedance, Junction to Case 25 000 MHz ies 000 res oes 000 10 000 5000 Collector to Emitter Voltage (V) CE Fig Typical Capacitance vs. Collector to Emitter Voltage 400 V ...

Page 5

... IGBT INT-A-PAK (Ultrafast Speed IGBT 000 12 000 8000 4000 120 140 160 250 200 150 100 1400 200 160 120 80 40 3.0 3.5 For technical questions, contact: indmodules@vishay.com GA75TS120UPbF Vishay High Power Products V = 720 125 ° ° 150 500 1000 ...

Page 6

... GA75TS120UPbF Vishay High Power Products ± Fig. 17a - Test Circuit for Measurement d(on) r d(off d(off Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining off d(off) www.vishay.com 6 "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT CES , off(diode µ Vce ic dt off Gate signal ...

Page 7

... Circuit configuration (T = Half-bridge) - Package indicator (INT-A-PAK) - Voltage rating (120 = 1200 V) - Speed/type (U = Ultrafast) - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: indmodules@vishay.com GA75TS120UPbF Vishay High Power Products 600 Fig Pulsed Collector Current Test Circuit U PbF 7 8 www.vishay.com/doc?95173 www.vishay.com at 25 ° ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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