GA75TS120UPBF Vishay, GA75TS120UPBF Datasheet - Page 3

• Manufacturer Part Number: GA75TS120UPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,75A I(C)
• Manufacturer: Vishay

Specifications of GA75TS120UPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 110 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94427
Revision: 03-May-10
1000
1000
100
100
10
10
1
1
0.5
4.0
V
500 µs pulse width
V
Fig. 3 - Typical Transfer Characteristics
GE
Fig. 2 - Typical Output Characteristics
V
500 µs pulse width
CE
4.5
80
70
60
50
40
30
20
10
GE
V
= 20 V
0
1.0
GE
125 °C
- Collector to Emitter Voltage (V)
0.1
= 15 V
125 °C
- Gate to Emitter Voltage (V)
5.0
Square wave:
1.5
5.5
60 % of rated
Ideal diodes
I
2.0
6.0
voltage
25 °C
6.5
25 °C
2.5
For technical questions, contact:
7.0
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
3.0
7.5
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
1
8.0
3.5
f - Frequency (kHz)
RMS
of Fundamental)
[e-mail]
160
140
120
100
3.0
2.5
2.0
1.5
80
60
40
20
0
0
Fig. 5 - Typical Collector to Emitter Voltage vs.
0
10
V
500 µs pulse width
GE
Maximum DC Collector Current (A)
Vishay High Power Products
T
= 15 V
20
30
J
Fig. 4 - Case Temperature vs.
Maximum Collector Current
- Junction Temperature (°C)
For both:
Duty cycle: 50 %
T
T
Gate drive as specified
Power dissipation = 83 W
J
sink
Junction Temperature
= 125 °C
= 90 °C
40
60
GA75TS120UPbF
60
I
C
90
DC
I
C
= 75 A
I
C
= 37 A
80
= 150 A
120
100
100
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120
150
3