GA75TS120UPBF Vishay, GA75TS120UPBF Datasheet - Page 6

• Manufacturer Part Number: GA75TS120UPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,75A I(C)
• Manufacturer: Vishay

Specifications of GA75TS120UPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 110 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GA75TS120UPbF
Vishay High Power Products
www.vishay.com
6
Fig. 17a - Test Circuit for Measurement of I
+ V
Fig. 17b - Test Waveforms for Circuit of Fig. 18a,
I
L1
C
GE
10 % V
t
d(off)
+
- V
-
V
G2
CC
CE
+ V
G2
+
t1
-
Defining E
I
rr
L2
L3
, t
V
d(on)
CE
R
R
90 % V
R
R
G2
G2
, t
I
G1
G1
C
off
r
, t
t
f
, t
V
LS = L1 + L2 + L3
V
d(off)
GE
CC
GE
d(off)
t2
90 % I
= 60 % of BV
= ± 15 V
, t
, t
For technical questions, contact:
f
LM
Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit
E
f
off
, E
C
5 % I
=
on
t0
, E
t1
Vce ic dt
C
V
t1 + 5 µs
CES
CE
off(diode)
"Half-Bridge" IGBT INT-A-PAK
L
(Ultrafast Speed IGBT), 75 A
I
C
dt
, t
rr
t1
, Q
rr
t2
,
V
[e-mail]
G
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
V
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
CC
V
Diode reverse
recovery energy
pk
I
10 % + V
C
10 % I
t
d(on)
10 % V
t
x
C
t1
G
I
Defining E
rr
Defining E
V
CC
CE
t
r
t3
5 % V
t
rr
rec
90 % I
on
, t
, t
CE
Gate voltage D.U.T.
+ V
rr
d(on)
, Q
C
G
Diode recovery
waveforms
t4
Document Number: 94427
E
rr
, t
, I
rec
10 % I
r
t2
rr
E
Q
=
D.U.T. voltage
and current
I
on
pk
rr
Revision: 03-May-10
=
=
t3
rr
V
t4
D
t
t1
x
id dt
I
V
C
I
t
I
t2
C
rr
C
CE
dt
V
dt
CC
I
C
dt