SI4100DY-T1-E3 Vishay, SI4100DY-T1-E3 Datasheet

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SI4100DY-T1-E3

Manufacturer Part Number
SI4100DY-T1-E3
Description
N-CHANNEL 100-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI4100DY-T1-E3

Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.063 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.4 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4100DY-T1-E3
Manufacturer:
STM
Quantity:
186
Part Number:
SI4100DY-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4100DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. T
Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
C
100
= 25 °C.
(V)
S
S
S
G
0.063 at V
0.084 at V
1
2
3
4
Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Top View
SO-8
GS
GS
J
(Ω)
= 10 V
= 150 °C)
= 6 V
b, c
N-Channel 100-V (D-S) MOSFET
8
7
6
5
D
D
D
D
I
D
6.8
5.8
(A)
Steady State
d
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
g
9 nC
(Typ.)
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % UIS Tested
• High Frequency Boost Converter
• LED Backlight for LCD TV
Available
Typical
37
17
®
Power MOSFET
G
N-Channel MOSFET
- 55 to 150
4.4
3.5
2.1
2.5
1.6
Limit
± 20
100
6.8
5.4
3.8
20
19
18
5
6
a, b
a, b
a, b
a, b
a, b
D
S
Maximum
50
21
Vishay Siliconix
Si4100DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4100DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free) Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Avalanche Current Single Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4100DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current 4 Total Gate Charge (nC) g Gate Charge Document Number: 69251 S09-0220-Rev. B, 09-Feb- Si4100DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 2.2 2 ...

Page 4

... Si4100DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4.0 3.6 3.2 2.8 2.4 2 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µ 100 125 150 100 * Limited by R ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69251 S09-0220-Rev. B, 09-Feb-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4100DY Vishay Siliconix ...

Page 6

... Si4100DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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