SI4100DY-T1-E3 Vishay, SI4100DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4100DY-T1-E3
• Description: N-CHANNEL 100-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4100DY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.063 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4100DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
4.0
3.6
3.2
2.8
2.4
2.0
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
75
0.8
I
D
0.01
100
= 250 µA
100
0.1
T
10
J
1
0.1
= 25 °C
1.0
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
T
GS
Limited by R
A
= 25 C
150
1.2
V
minimum V
DS
1
- Drain-to-Source Voltage (V)
DS(on)
BVDSS Limited
GS
*
at which R
10
DS(on)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
100
50
40
30
20
10
0.001
0
is specified
10 s
DC
100 µs
10 ms
100 ms
1 s
1 ms
4
On-Resistance vs. Gate-to-Source Voltage
0.01
5
1000
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
6
0.1
S09-0220-Rev. B, 09-Feb-09
Time (s)
7
Document Number: 69251
1
8
10
I
D
T
T
A
= 4.4 A
A
= 125 °C
= 25 °C
9
100
600
10