SI4100DY-T1-E3 Vishay, SI4100DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4100DY-T1-E3
• Description: N-CHANNEL 100-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4100DY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.063 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4100DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69251.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
-4
0.1
0.05
0.02
0.05
0.2
0.2
0.1
Duty Cycle = 0.5
0.02
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
-3
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
- 2
10
-1
10
1
- 1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
1
A
S09-0220-Rev. B, 09-Feb-09
= P
t
2
Document Number: 69251
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 68 °C/W
600
10