SI4409DY-T1-E3 Vishay, SI4409DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4409DY-T1-E3
• Description: P-CHANNEL 150-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4409DY-T1-E3

• Rohs Compliant: YES
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.9 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4409DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.5
1.3
1.0
0.7
0.4
0.1
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
T
25
- Temperature (°C)
J
= 150 °C
0.6
50
I
D
= 250 µA
75
0.8
0.001
100
0.01
0.1
10
1
0.1
T
1.0
J
= 25 °C
125
Safe Operating Area, Junction-to-Ambient
*V
GS
New Product
150
1.2
*Limited by r
Single Pulse
minimum V
V
T
1
DS
A
= 25 °C
- Drain-to-Source Voltage (V)
DS(on)
GS
10
at which r
DS(on)
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
0
0.001
100
0
On-Resistance vs. Gate-to-Source Temperature
is specified
I
D
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
dc
= 0.5 A
2
1000
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (sec)
0.1
S-71276–Rev. A, 02-Jul-07
Document Number: 70485
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